The insulated gate bipolar transistors (IGBTs) combines an easily driven MOS gate and low conduction loss, and is quickly displacing power bipolar transistors as the device of choice for high current ...
Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...
For inverter applications, such as motor drives, uninterruptible power supplies, switchmode power supplies, high intensity lamp ballasts, and induction heating, the gates of insulated gate bipolar ...
CHANDLER, Ariz., Nov. 12, 2024 (GLOBE NEWSWIRE) -- Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems.
An advanced 1.0 A dual output, intelligent IGBT gate drive optocoupler maximizes gate drive design scalability for motor control and power conversion applications ranging from low to high power ...
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