Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Motorola develops a dual-gate transistor in which the two gates can switch on and off independently--a twist the company says could increase performance and reduce power consumption. Michael Kanellos ...