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Room-temperature terahertz device opens door to 6G networks
In a world first, researchers at Nagoya University in Japan have successfully developed a resonant tunnel diode (RTD) that ...
Atomic Force Microscopy (AFM) showed that stepped terrace structures dominated at low doping levels, while increasing silicon ...
Electrical Engineering Assistant Professor Anhar Bhuiyan has won two National Science Foundation grants to research next-generation electronic materials and components.
Contact resistivity and Schottky barrier engineering are central to optimising the performance of semiconductor devices. The efficiency of charge injection at metal–semiconductor interfaces directly ...
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Researchers develop eco-friendly method of creating semiconductor materials for electronics
A Virginia Commonwealth University researcher has developed an alternative method of producing semiconductor materials that is environmentally friendly. Subscribe to our newsletter for the latest ...
Shibayama and his colleagues have now discovered how to use only Group IV materials to produce a p-RTD that functions at room ...
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