PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (Diodes) (Nasdaq: DIOD) expands its PowerDI8080-5 automotive-compliant* N-channel MOSFET portfolio with the introduction of an industry-leading, ...
USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...
NANJING, China--(BUSINESS WIRE)--Today, SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China.
Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
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Taiwan-based power MOSFET and diode suppliers are more enthusiastic about demand from the automotive industry than from AI in 2024 and beyond. Some subscribers prefer to save their log-in information ...
How to replace MOSFETs with load switches, and the impact of on-resistance. Swapping out diodes with ideal diodes, and the use of ideal-diode controllers. Why replacing fuses and resettable fuses with ...
The objective of the circuit is to create a power supply using V-MOSFET technology to support amplifiers while producing 100 Watts power output. Vertical Metal Oxide Semiconductor Field Effect ...
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